SiC MOS-CHAAO SEMI Co.,Ltd.

Products

Si MOSFET

Si IGBT

Si SBD

Schottky Diode

SiC MOSFET/SBD

Overview

Products

SiC MOS

CHAAO SEMI SiC MOS products can withstand voltages of 650, 800, 1200V, on-resistance of 26~190mΩ, maximum drain current of 11~99A, packaged in TO-220F, TO-220, TO-247-3L and so on.

Product Display

TO-247-3

TO-247

TO-220F

TO-220C

TO-220AB

SiC SBD SiC MOS

Product Model

CAS Type	Finished product model	Voltage(V)	R_DS(ON) (mΩ)	I_D(A)	Package	Datasheet

SiC MOSFET	CSM26A065PTZ	650	26	99	TO-247-3
SiC MOSFET	CSM55A065PTZ	650	55	55	TO-247-3
SiC MOSFET	CSM90A065PBZ	650	90	30	TO-220
SiC MOSFET	CSM95A065PCZ	650	95	24	TO-220F
SiC MOSFET	CSM190A080PCZ	800	190	11	TO-220F
SiC MOSFET	CSM40A120PFTJ	1200	40	76	TO-247-4
SiC MOSFET	CSM40A120PDJ	1200	40	76	TO-263-7
SiC MOSFET	CSM40A120PTJ	1200	40	76	TO-247
SiC MOSFET	CSM80A120PFC	1200	80	36	TO-247-4
SiC MOSFET	CSM80A120PDC	1200	80	36	TO-247-3