IGBT is composed of MOSFET and BJT. It has the characteristics of high input impedance, low driving power, high switching frequency, large conduction current, small conduction loss, low saturation voltage, and high reliability. Chao Wei focus Trench-FS IGBT structure, is committed to providing customers with better products, better balance on-state loss and switching loss, ‌ on-state loss and device voltage withstand. ‌ The series products are widely used in household appliances, motor drive systems and other consumer, ‌ industrial fields.