SiC MOSFET and SBD, as two important technologies in power semiconductors, mainly use the characteristics of silicon carbide material such as high band gap width, ‌ high critical electric field, ‌ high saturation drift speed and high thermal conductivity, ‌ provides the ability of high speed, ‌ high frequency, ‌ high efficiency and high temperature operation. ‌ Chao Wei is deeply engaged in this field, aiming at providing customers with higher performance and high reliability application products. At present, this series of products has successfully helped customers such as downstream automotive OBC, electric welding machine and Yu Yu lamp.